Ga FIB TEM Sample Preparation from 10nm FinFET

  • TEM of a FinFET prepared with a TESCAN SOLARIS Ga FIB-SEM

    Inspection of advanced materials and semiconductors at the nanoscale often involves TEM imaging, which in turn requires specialised sample preparation. In this application note we outline the procedure and demonstrate the applicability of the TESCAN SOLARIS Ga FIB-SEM for preparing high quality TEM lamellae from a 10nm FinFET device. This specific example uses the latest generation microchip and is commonly used in failure analysis.